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DISCRETE SEMICONDUCTORS
DATA SHEET
*
M3D125
BC177 PNP general purpose transistor
Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 04
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES * Low current (max. 100 mA) * Low voltage (max. 45 V). APPLICATIONS * General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107.
3
BC177
PINNING PIN 1 2 3 emitter base collector, connected to the case DESCRIPTION
1 handbook, halfpage 2
3 2
MAM263
1
Fig.1
Simplified outline (TO-18; SOT18) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb 25 C IC = -2 mA; VCE = -5 V IC = -10 mA; VCE = -5 V; f = 100 MHz open emitter open base CONDITIONS - - - - 125 100 MIN. MAX. -50 -45 -200 300 500 - MHz V V mA mW UNIT
1997 Jun 04
2
Philips Semiconductors
Product specification
PNP general purpose transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN.
BC177
MAX. -50 -45 -5 -100 -200 -200 300 +150 175 +150 V V V
UNIT
mA mA mA mW C C C
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case note 1 CONDITIONS VALUE 0.5 0.2 UNIT K/mW K/mW
1997 Jun 04
3
Philips Semiconductors
Product specification
PNP general purpose transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE hFE PARAMETER collector cut-off current emitter cut-off current DC current gain DC current gain BC177A BC177B VCEsat VBEsat VBE Cc fT F Note 1. VBE decreases by about -2 mV/K with increasing temperature. collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA IC = -2 mA; VCE = -5 V; note 1 IE = ie = 0; VCB = -10 V; f = 1 MHz IC = -200 A; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200 Hz CONDITIONS IE = 0; VCB = -20 V IE = 0; VCB = -20 V; Tj = 150 C IC = 0; VEB = -5 V IC = -2 mA; VCE = -5 V IC = -2 mA; VCE = -5 V 125 240 - - - - -600 - - 180 290 -75 -250 -700 -850 -650 4 - - MIN. - - - 125 TYP. -1 - - 140
BC177
MAX. -15 -10 50 500 260 500 -300 - - - -750 6 - 10
UNIT nA A nA
mV mV mV mV mV pF MHz dB
IC = -10 mA; VCE = -5 V; f = 100 MHz 100
1997 Jun 04
4
Philips Semiconductors
Product specification
PNP general purpose transistor
PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads
BC177
SOT18/13
j B
seating plane wM AMBM
1
k D1
b
2 3
a A D A L
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.31 4.74 a 2.54 b 0.47 0.41 D 5.45 5.30 D1 4.70 4.55 j 1.03 0.94 k 1.1 0.9 L 15.0 12.7 w 0.40 45
OUTLINE VERSION SOT18/13
REFERENCES IEC B11/C7 type 3 JEDEC TO-18 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
1997 Jun 04
5
Philips Semiconductors
Product specification
PNP general purpose transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BC177
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jun 04
6
Philips Semiconductors
Product specification
PNP general purpose transistor
NOTES
BC177
1997 Jun 04
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/03/pp8
Date of release: 1997 Jun 04
Document order number:
9397 750 02374

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